DE275X2-102N06A rf power mosfet directed energy, inc. an ixys company preliminary data sheet v dss = 1000 v i d25 = 6 a r ds(on) = 2.0 ? ? ? ? p dhs = 750 w symbol test conditions maximum ratings v dss t j = 25c to 150c 1000 v v dgr t j = 25c to 150c; r gs = 1 m ? 1000 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25c 6 a i dm t c = 25c, pulse width limited by t jm 48 a i ar t c = 25c 6 a e ar t c = 25c 20 mj i s i dm , di/dt ? 100a/ s, v dd v dss , t j 150c, r g = 0.2 ? 5 v/ns i s = 0 >200 v/ns p dhs (1) t c = 25c, derate 6.0w/c above 25c 750 w p damb (1) t c = 25c 5.0 w t j -55?+150 c t jm 150 c t stg -55?+150 c t l 1.6mm (0.063 in) from case for 10 s 300 c weight 4 g dv/dt r thjhs (1) 0.17 k/w symbol test conditions characteristic values t j = 25c unless otherwise specified min. typ. max. v dss v gs = 0 v, i d = 3 ma 1000 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25c v gs = 0 t j = 125c 50 1 a ma r ds(on) 2.5 ? g fs v ds = 15 v, i d = 0.5i d25 , pulse test 2 6 s v gs = 15 v, i d = 0.5i d25 pulse test, t 300 s, duty cycle d 2% features ? isolated substrate ? high isolation voltage (>2500v) ? excellent thermal transfer ? increased temperature and power cycling capability ? ixys advanced low q g process ? low gate charge and capacitances ? easier to drive ? faster switching ? low r ds(on) ? very low insertion inductance (<2nh) ? no beryllium oxide (beo) or other hazardous materials advantages ? high performance push-pull rf package ? optimized for rf and high speed switching at frequencies to >100mhz ? easy to mount?no insulators needed ? high power density ? common source push-pull pair ? n-channel enhancement mode ? low q g and r g ? high dv/dt ? nanosecond switching drain 1 sg1 sd1 gate 1 drain 2 sg2 sd2 gate 2 the DE275X2-102N06A is a matched pair of rf power mosfet devices in a common source configuration. the device is optimized for push-pull or parallel operation in rf generators and amplifiers at frequencies to >65 mhz. note: all specifications are per each tran- sistor, unless otherwise noted. (1) thermal specifications are for the package, not per transistor unless noted, specifications are for each output device
DE275X2-102N06A rf power mosfet directed energy, inc. an ixys company symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. r g 0.3 ? c iss 1800 pf c oss v gs = 0 v, v ds = 0.8 v dss(max) , f = 1 mhz 100 pf c rss 30 pf t d(on) 3 ns t on v gs = 15 v, v ds = 0.8 v dss i d = 0.5 i dm r g = 0.2 ? (external) 2 ns t d(off) 4 ns t off 5 ns q g(on) 50 nc q gs v gs = 10 v, v ds = 0.5 v dss i d = 0.5 i d25 20 nc q gd 30 nc source-drain diode characteristic values (t j = 25c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 6 a i sm repetitive; pulse width limited by t jm 48 a v sd 1.5 v t rr 200 ns i f = i s , v gs = 0 v, pulse test, t 300 s, duty cycle 2% q rm i f = i s , -di/dt = 100a/ s, v r = 100v 0.6 c i rm 4 a directed energy, inc. reserves the right to change limits, test conditions and dimensions. dei mosfets are covered by one or more of the following u.s. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 (1) these parameters apply to the package, not individual mosfet devices. for detailed device mounting and installation instructions, see the ? de- series mosfet mounting instructions ? technical note on dei?s web site at www.directedenergy.com/apptech.htm
DE275X2-102N06A rf power mosfet directed energy, inc. an ixys company 102n06a de-series spice model the de-series spice model is illustrated in figure 1. the model is an expansion of the spice level 3 mosfet model. it includes the stray inductive terms l g , l s and l d . rd is the r ds(on) of the device, rds is the resistive leakage term. the output capacitance, c oss , and reverse transfer capacitance, c rss are modeled with reversed biased diodes. this provides a varactor type response necessary for a high power device model. the turn on delay and the turn off delay are adjusted via ron and roff. figure 1 de-series spice model this spice model may be downloaded as a text file from the dei web site at www.directedenergy.com/spice.htm net list: *sym=powmosn .subckt 102n06a 10 20 30 * terminals: d g s * 1000 volt 6 amp 2.0 ohm n-channel power mosfet m1 1 2 3 3 dmos l=1u w=1u ron 5 6 .5 don 6 2 d1 rof 5 7 1.0 dof 2 7 d1 d1crs 2 8 d2 d2crs 1 8 d2 cgs 2 3 1.9n rd 4 1 1.7 dcos 3 1 d3 rds 1 3 5.0meg ls 3 30 .5n ld 10 4 1n lg 20 5 1n .model dmos nmos (level=3 vto=4 kp=2.3) .model d1 d (is=.5f cjo=10p bv=100 m=.5 vj=.2 tt=1n) .model d2 d (is=.5f cjo=400p bv=1000 m=.6 vj=.6 tt=1n rs=10m) .model d3 d (is=.5f cjo=400p bv=1000 m=.35 vj=.6 tt=400n rs=10m) .ends 56 7 8 4 10 drain 30 source 20 gate don dcos d2crs d1crs rds ron doff roff rd lg ld ls m3 2 1 3 directed energy, inc. an ixys company 2401 research blvd., suite 108 fort collins, co usa 80526 970-493-1901 fax: 970-493-1903 email: deiinfo@directedenergy.com web: http://www.directedenergy.com doc #9200-0224 rev 2 ? 2001 directed energy, inc.
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